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SSM6N815R,LF

Part No SSM6N815R,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog TRANSISTORS
Description MOSFETs LowON Res MOSFET ID=2A VDSS=100V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba
Technology Si
Mounting Style SMD/SMT
Package / Case TSOP-6
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 2 A
Rds On - Drain-Source Resistance 84 mOhms, 84 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 3.1 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.4 W
Channel Mode Enhancement
Tradename U-MOSVIII-H
Series SSM6N815
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Configuration Dual
Transistor Type 2 N-Channel
Brand Toshiba
Forward Transconductance - Min 4.8 S, 4.8 S
Product Type MOSFETs
Standard Pack Qty 3000
Subcategory Transistors
Typical Turn-Off Delay Time 21 ns, 21 ns
Typical Turn-On Delay Time 7.5 ns, 7.5 ns
Ultra Librarian 3D Model Ultra Librarian SSM6N815R,LF CAD Model

Description

The 1278534-SSM6N815R,LF from Toshiba Semiconductor and Storage is a 2 N-Channel (Dual) FET, with a 4V Drive Logic Level Gate.

  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 2A (Ta) @ 25°C
  • Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
  • Operating Temperature Range: 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5585 $50.2650
220+ $0.4583 $100.8260
340+ $0.4440 $150.9600
470+ $0.4297 $201.9590
605+ $0.4153 $251.2565
810+ $0.3724 $301.6440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 91,526 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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