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BCP56,115

Part No BCP56,115
Manufacturer Nexperia USA Inc.
Catalog TRANSISTORS
Description Bipolar Transistors - BJT 80 V, 1 A NPN medium power transistors
Datasheet
Sample
Rohs State rohs
ECAD Module
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Manufacturer Nexperia
Mounting Style SMD/SMT
Package / Case SOT-223-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 80 V
Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 1 A
Pd - Power Dissipation 650 mW
Gain Bandwidth Product fT 180 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series BCP56
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
DC Current Gain hFE Max 63 at 5 mA, 2 V
Height 1.7 mm
Length 6.7 mm
Technology Si
Width 3.7 mm
Brand Nexperia
DC Collector/Base Gain hfe Min 63 at 5 mA, 2 V, 63 at 150 mA, 2 V, 40 at 500 mA, 2 V
Product Type BJTs - Bipolar Transistors
Standard Pack Qty 1000
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian BCP56,115 CAD Model

Description

Product Overview: BCP56,115 by NXP Semiconductors

The BCP56,115 is a high-performance NPN bipolar junction transistor (BJT) developed by NXP Semiconductors, a leader in the electronic components industry. This medium power transistor is designed to deliver excellent efficiency and reliability for a wide range of applications. The BCP56,115 is housed in a SOT223 surface-mounted plastic package, making it suitable for automated assembly processes and space-constrained applications.

Key Features

  • High Current Capability: The BCP56,115 boasts a collector current (Ic) of up to 1 A, enabling it to handle significant power for its size.
  • High Voltage Tolerance: With a collector-emitter voltage (Vceo) of 80 V, this device can operate effectively in circuits with higher voltage requirements.
  • Low Saturation Voltage: The low collector-emitter saturation voltage ensures higher efficiency by minimizing power loss during operation.
  • Excellent Gain Characteristics: The transistor offers high and consistent DC current gain (hFE) across its operational range, contributing to stable performance.
  • Thermal Performance: The SOT223 package enhances thermal performance, allowing for better heat dissipation and improved reliability.

Applications

The BCP56,115 is suitable for a diverse set of applications that require medium power handling and switching capabilities. It is commonly used in:

  • Linear voltage regulators
  • Power management circuits
  • Motor control systems
  • Audio amplifiers
  • Signal processing
  • Switching applications

Quality and Reliability

NXP Semiconductors is committed to providing products that meet the highest standards of quality and reliability. The BCP56,115 is no exception and is manufactured with stringent quality control processes to ensure it meets the needs of even the most demanding applications.

In summary, the BCP56,115 from NXP Semiconductors is a robust and versatile NPN transistor that provides a blend of high power handling, efficiency, and thermal performance, making it an ideal choice for designers and engineers looking to optimize their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
305+ $0.1664 $50.7520
645+ $0.1558 $100.4910
1,000+ $0.1506 $150.6000
1,430+ $0.1400 $200.2000
1,855+ $0.1348 $250.0540
2,320+ $0.1295 $300.4400
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 127,420 pieces
MOQ: 305 pcs
Order Increment : 1 pcs
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