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BSH103,215

Part No BSH103,215
Manufacturer Nexperia USA Inc.
Catalog TRANSISTORS
Description MOSFETs 30 V, N-channel Trench MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Manufacturer Nexperia
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-23-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 850 mA
Rds On - Drain-Source Resistance 400 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 2.1 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 750 mW
Channel Mode Enhancement
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Brand Nexperia
Product Type MOSFETs
Standard Pack Qty 3000
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian BSH103,215 CAD Model

Description

The BSH103,215 is a high-performance, low-power MOSFET manufactured by NXP Semiconductors, a leader in the field of high-quality semiconductor products. This particular MOSFET is designed to cater to a wide range of applications, offering an optimal balance between efficiency and reliability.

Key Features

  • Low Threshold Voltage: The BSH103,215 has a low threshold voltage, making it suitable for low-voltage applications and ensuring efficient operation at lower power levels.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, including power supplies and converters.
  • Low On-State Resistance: The device boasts a low on-state resistance (RDS(on)), which minimizes power loss and heat generation during operation, thus enhancing system efficiency.
  • Surface-Mount Package: The BSH103,215 comes in a compact SOT23 package, which is suitable for automated assembly processes and helps reduce the overall footprint of the circuit design.

Applications

This versatile MOSFET can be used in a variety of electronic circuits and applications, including:

  • Power management modules
  • DC/DC converters
  • Battery-powered devices
  • Motor control circuits
  • Load switching
  • Portable electronics

Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) 1.7 A
Power Dissipation (PD) 1.25 W
Operating Temperature Range -55°C to +150°C

Quality and Reliability

NXP's commitment to quality ensures that the BSH103,215 MOSFET meets stringent industry standards for performance and reliability. It is designed to withstand harsh environments and is tested rigorously to guarantee a long operational life.

For detailed technical specifications, application notes, and support documentation, please refer to the official NXP Semiconductors product page or contact their customer support team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7128 $53.4600
150+ $0.6677 $100.1550
235+ $0.6452 $151.6220
335+ $0.6000 $201.0000
435+ $0.5775 $251.2125
545+ $0.5549 $302.4205
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