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Same model may have multiple batches, images only for reference.
RN1130MFV(TL3,T)
Same model may have multiple batches, images only for reference.

RN1130MFV(TL3,T)

Part No RN1130MFV(TL3,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description X34 Pb-f Vesm Transistor Pd 150MW F 1MHZ (lf)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-723
Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 300 mV
Max Breakdown Voltage 50 V
Max Collector Current 100 mA
Max Power Dissipation 150 mW
Mount Surface Mount
Packaging Cut Tape (CT)
RoHS Compliant
Transition Frequency 250 MHz
Win Source Part Number 974586-RN1130MFV(TL3,T)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RN1130MFV(TL3,T) CAD Model

Description

The Toshiba Semiconductor and Storage electronic component is a RF transistor (BJT) that comes in a SOT-723 case/package.

  • RoHS Compliant: Yes
  • Power Dissipation - Max: 150 mW
  • Breakdown Voltage - Max: 50 V
  • Collector Emitter Breakdown Voltage: 50 V
  • Collector Emitter Voltage (VCEO): 300 mV
  • Collector Current - Max: 100 mA
  • Transition Frequency: 250 MHz
  • Supply and Demand Status: Shortage

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Pricing & Ordering

Quantity Unit Price Ext. Price
650+ $0.0889 $57.7850
1,590+ $0.0728 $115.7520
2,460+ $0.0705 $173.4300
3,390+ $0.0681 $230.8590
4,390+ $0.0658 $288.8620
5,885+ $0.0589 $346.6265
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,930 pieces
MOQ: 650 pcs
Order Increment : 1 pcs
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