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Same model may have multiple batches, images only for reference.
RJK0390DPA-00#J53 Real Image
Same model may have multiple batches, images only for reference.

RJK0390DPA-00#J53

Part No RJK0390DPA-00#J53
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 65A 8WPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 65A (Ta)
Rds On (Max) @ Id, Vgs 2.2mOhm @ 32.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 8900 pF @ 10 V
Power Dissipation (Max) 60W (Tc)
Mounting Type Surface Mount
Supplier Device Package 8-WPAK
Package / Case 8-PowerWDFN
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 295263-RJK0390DPA-00#J53
Ultra Librarian 3D Model Ultra Librarian RJK0390DPA-00#J53 CAD Model

Description

The RJK0390DPA-00#J53 is a single N-Channel MOSFET transistor used in discrete semiconductor products.

  • Category: Transistors - FETs, MOSFETs
  • Manufacturer: Renesas Electronics America
  • Vdss: 30V
  • Id: 65A @ 25°C
  • Rds On (Max): 2.2mOhm @ 32.5A and 10V
  • Power Dissipation: 60W
  • Mounting: Surface mountable
  • Package: 8-PowerWDFN
  • Supplier Device Package: 8-WPAK
  • Gate Charge (Qg): 54nC @ 4.5V
  • Input Capacitance (Ciss): 8900pF @ 10V
  • Status: Obsolete

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