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Same model may have multiple batches, images only for reference.
RJK0397DPA-00#J53 Real Image
Same model may have multiple batches, images only for reference.

RJK0397DPA-00#J53

Part No RJK0397DPA-00#J53
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A 8WPAK / N-Channel 30 V 30A (Ta) 25W (Tc) Surface Mount 8-WPAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Rds On (Max) @ Id, Vgs 10.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 10 V
Power Dissipation (Max) 25W (Tc)
Mounting Type Surface Mount
Supplier Device Package 8-WPAK
Package / Case 8-PowerWDFN
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 295284-RJK0397DPA-00#J53
Ultra Librarian 3D Model Ultra Librarian RJK0397DPA-00#J53 CAD Model

Description

The RJK0397DPA-00#J53 is a high-quality N-Channel MOSFET transistor designed for discrete semiconductor applications. Manufactured by Renesas Electronics America, this MOSFET transistor offers reliable performance and versatility.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id) @ 25°C: 30A
  • On-Resistance (Rds On): 10.1mOhm @ 15A and 10V
  • Mounting: surface mountable
  • Package: 8-PowerWDFN
  • Gate Charge (Qg): 7.4nC @ 4.5V
  • Input Capacitance (Ciss): 1110pF @ 10V
  • Product Status: obsolete

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