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Same model may have multiple batches, images only for reference.
RJK0602DPN-E0#T2 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJK0602DPN-E0#T2

Part No RJK0602DPN-E0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TO220
Datasheet
RJK0602DPN-E0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 110A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 90nC @ 10V
Max Input Capacitance 6450pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 50A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1092283-RJK0602DPN-E0#T2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RJK0602DPN-E0#T2 CAD Model

Description

The Renesas Electronics America RJK0602DPN-E0#T2 is an N-channel MOSFET that comes with a TO-220AB case/package.

  • Manufacturer: Renesas Electronics America
  • Channel Type: N-channel MOSFET
  • Case/Package: TO-220AB
  • Supply and Demand Status: Sufficient
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Rds On: 3.9 mOhm @ 50A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $81.4725 $81.4725
2+ $66.8491 $133.6982
3+ $64.7609 $194.2827
4+ $62.6715 $250.6860
5+ $60.5821 $302.9105
7+ $54.3150 $380.2050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,900 pieces
Order Increment : 1 pcs
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