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Same model may have multiple batches, images only for reference.
RJK1003DPN-E0#T2 Real Image
Same model may have multiple batches, images only for reference.

RJK1003DPN-E0#T2

Part No RJK1003DPN-E0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 50A TO220
Datasheet
RJK1003DPN-E0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 59nC @ 10V
Max Input Capacitance 4150pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 25A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1092290-RJK1003DPN-E0#T2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJK1003DPN-E0#T2 CAD Model

Description

The Renesas Electronics America RJK1003DPN-E0#T2 is a medium popularity electronic component.

  • Manufacturer: Renesas Electronics America
  • Win Source Part Number: 1092290
  • Technology: MOSFET
  • Polarity: N-Channel
  • Maximum Power Dissipation: 125W
  • Maximum Drain-Source Breakdown Voltage: 100V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $68.1173 $68.1173
3+ $55.8916 $167.6748
4+ $54.1452 $216.5808
5+ $52.3977 $261.9885
6+ $50.6514 $303.9084
8+ $45.4123 $363.2984
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,600 pieces
Order Increment : 1 pcs
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