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RJK1003DPP-E0#T2

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Part No	RJK1003DPP-E0#T2
Manufacturer	Renesas Electronics America
Catalog	Transistors - FETs, MOSFETs - RF
Description	RJK1003DPP - N-CHANNEL MOSFET 10 / N-Channel 100 V 50A (Ta) 25W (Tc) Through Hole TO-220FP
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Renesas
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4150 pF @ 10 V
Power Dissipation (Max)	25W (Tc)
Temperature Range - Operating	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220FP
Package / Case	TO-220-3 Full Pack
RoHS Status	RoHS non-compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-RJK1003DPP-E0#T2
Standard Package	1
Win Source Part Number	1088471-RJK1003DPP-E0#T2
Ultra Librarian 3D Model	Ultra Librarian RJK1003DPP-E0#T2 CAD Model

Alternative Products

Description

The Renesas 1088471-RJK1003DPP-E0#T2 is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

Package: TO-220-3 Full Pack
Drain to Source Voltage: 100V (Maximum)
Continuous Drain Current: 50A @ 25°C
Rds On: 11mOhm (Maximum) @ 25A and 10V
Gate Charge: 59 nC (Maximum) @ 10V
Input Capacitance: 4150 pF (Maximum) @ 10V
Operating Temperature: 150°C (Maximum)
Status: Obsolete
RoHS: Non-compliant

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