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RJK1056DPB-00#J5

Part No RJK1056DPB-00#J5
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 100V 25A 5-Pin(4+Tab) LFPAK T/R / MOSFET N-CH 100V 25A LFPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 41nC @ 10V
Max Input Capacitance 3000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 12.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 118613-RJK1056DPB-00#J5
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name RJK1056DPB-00
Introduction Date December 17, 2009
ECCN EAR99
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian RJK1056DPB-00#J5 CAD Model

Description

The Renesas Electronics America RJK1056DPB-00#J5 is an N-channel MOSFET that has a high popularity in the market. It has a power dissipation of 65W (Tc) and a drain-source breakdown voltage of 100V.

  • Maximum Rds On @ Id,Vgs: 14 mOhm @ 12.5A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: LFPAK package
  • Mounting Type: SMD (SMT)
  • Suitability: Suitable for use in various applications, including power supplies, motor control, and DC-DC converters
  • Supply and Demand Status: Balanced
  • Estimated EOL date: 2028

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.9178 $58.7670
36+ $3.2144 $115.7184
56+ $3.1139 $174.3784
77+ $3.0134 $232.0318
100+ $2.9129 $291.2900
133+ $2.6115 $347.3295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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