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SSM3J321T(TE85L,F)

Part No SSM3J321T(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.2A TSM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 8.1nC @ 4.5V
Max Input Capacitance 640pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 46 mOhm @ 3A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSM
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 097235-SSM3J321T(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J321T(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage SSM3J321T(TE85L,F) is a P-Channel MOSFET that comes in TO-236-3, SC-59, SOT-23-3 dimensions.

  • Dimensions: TO-236-3, SC-59, SOT-23-3
  • Maximum Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5.2A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 8.1nC @ 4.5V
  • Maximum Input Capacitance: 640pF @ 10V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On @ Id, Vgs: 46 mOhm @ 3A, 4.5V
  • Supply and Demand Status: sufficient
  • Status: obsolete (EOL)
  • Packaging: reel - TR
  • Mounting: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,396 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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