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Same model may have multiple batches, images only for reference.
RJK2055DPA-00#J0 Real Image
Same model may have multiple batches, images only for reference.

RJK2055DPA-00#J0

Part No RJK2055DPA-00#J0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V W-PAK
Datasheet
RJK2055DPA-00#J0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 38nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 69 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-WPAK
Dimension 8-PowerWDFN
Win Source Part Number 1092295-RJK2055DPA-00#J0
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJK2055DPA-00#J0 CAD Model

Description

The Renesas Electronics America RJK2055DPA-00#J0 is an N-channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 20A at 25°C.

  • Power Dissipation: 30W (Tc)
  • Package: 8-WPAK
  • Maximum Rds On at Id,Vgs: 69 mOhm @ 10A, 10V
  • Maximum Gate-Source Voltage: ±30V

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