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Same model may have multiple batches, images only for reference.
RJK5012DPP-E0#T2 Real Image
Same model may have multiple batches, images only for reference.

RJK5012DPP-E0#T2

Part No RJK5012DPP-E0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A TO220
Datasheet
RJK5012DPP-E0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 620 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1092304-RJK5012DPP-E0#T2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJK5012DPP-E0#T2 CAD Model

Description

The Renesas RJK5012DPP-E0#T2 is an N-channel MOSFET with a maximum power dissipation of 30W.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 12A @ 25°C
  • Package: TO-220FP
  • Maximum Gate Charge: 29nC @ 10V
  • Status: Active
  • Popularity Rating: Medium

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Quantity Unit Price Ext. Price
1+ $108.2570 $108.2570
2+ $104.7654 $209.5308
3+ $101.2727 $303.8181
4+ $90.7969 $363.1876
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