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Same model may have multiple batches, images only for reference.
RJK6012DPP-E0#T2 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJK6012DPP-E0#T2

Part No RJK6012DPP-E0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO220
Datasheet
RJK6012DPP-E0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 920 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1092316-RJK6012DPP-E0#T2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJK6012DPP-E0#T2 CAD Model

Description

The RJK6012DPP-E0#T2 is a MOSFET from Renesas Electronics America.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 10A
  • Package: TO-220FP
  • Operating Temperature Range: 150°C
  • Polarity: N-Channel
  • Power Dissipation: 30W (Tc)
  • Status: Active
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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