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Same model may have multiple batches, images only for reference.
RJK6025DPD-00#J2 Real Image
Same model may have multiple batches, images only for reference.

RJK6025DPD-00#J2

Part No RJK6025DPD-00#J2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1A MP3A
Datasheet
RJK6025DPD-00#J2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 37.5pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 29.7W (Tc)
Maximum Rds On at Id,Vgs 17.5 Ohm @ 500mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package MP-3A
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1092320-RJK6025DPD-00#J2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJK6025DPD-00#J2 CAD Model

Description

The Renesas Electronics America MOSFET is an N-Channel power transistor that is ideal for use in various applications.

  • Maximum Power Dissipation: 29.7W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1A (Ta)
  • Maximum Rds On: 17.5 Ohm @ 500mA, 10V
  • Package Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63

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