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RQA0002DNSTB-E Renesas Electronics America
Same model may have multiple batches, images only for reference.

RQA0002DNSTB-E

Part No RQA0002DNSTB-E
Manufacturer Renesas Electronics America
Catalog HOT - SALES and EOL Components
Description Silicon N-Channel MOS FET | MOSFET N-CH HWSON2
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 16V
Id - Continuous Drain Current 3.8A
Gate Source Voltage(th) (Maximum) at Id 750mV at 1mA
Gate Source Voltage (Maximum) ±5V
Power Dissipation (Maximum) 15W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 2-HWSON (5x4)
Manufacturer Package 3-DFN Exposed Pad
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 298711-RQA0002DNSTB-E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RQA0002DNSTB-E CAD Model

Description

The RQA0002DNSTB-E is a MOSFET technology product from Renesas Electronics America.

  • Mounting Style: SMD
  • Transistor Polarity: N-Channel
  • The product is a discrete semiconductor product and has a supplier device package of 2-HWSON (5x4).
  • Power Dissipation (Maximum): 15W
  • Popularity: medium
  • The supply and demand status is limited and has a manufacturer pack quantity of 2,000.
  • MSL Level: 1 (Unlimited)
  • Vds - Drain-Source Breakdown Voltage: 16V
  • Id - Continuous Drain Current: 3.8A
  • Gate Source Voltage (Maximum): ±5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.6364 $65.9100
60+ $2.1629 $129.7740
93+ $2.0956 $194.8908
128+ $2.0283 $259.6224
166+ $1.9598 $325.3268
221+ $1.7580 $388.5180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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