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UPA1803GR-9JG-E1-A

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Part No	UPA1803GR-9JG-E1-A
Manufacturer	Renesas Electronics America
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 8-TSSOP
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Renesas Electronics America
Package	Tape & Reel
Product Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Rds On (Max) @ Id, Vgs	12mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1880 pF @ 10 V
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Standard Package	2,500 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	389198-UPA1803GR-9JG-E1-A
Ultra Librarian 3D Model	Ultra Librarian UPA1803GR-9JG-E1-A CAD Model

Alternative Products

Description

The UPA1803GR-9JG-E1-A is a single N-channel MOSFET from Renesas Electronics America. It belongs to the discrete semiconductor products category and is specifically designed for power switching applications. This MOSFET is available in a tape & reel package with a standard package quantity of 2,500 pieces. It has a drain-to-source voltage rating of 30V and a continuous drain current rating of 8A @ 25°C. The UPA1803GR-9JG-E1-A has a low on-resistance and a gate threshold voltage of 2.5V. It offers reliable and efficient power switching capabilities, making it suitable for a wide range of applications.

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