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Same model may have multiple batches, images only for reference.
UPA1814GR-9JG-E1-A Real Image
Same model may have multiple batches, images only for reference.

UPA1814GR-9JG-E1-A

Part No UPA1814GR-9JG-E1-A
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 8-TSSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Tape & Reel
Product Status Last Time Buy
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Rds On (Max) @ Id, Vgs 16mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 10 V
Mounting Type Surface Mount
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 389209-UPA1814GR-9JG-E1-A
Ultra Librarian 3D Model Ultra Librarian UPA1814GR-9JG-E1-A CAD Model

Description

The UPA1814GR-9JG-E1-A is a P-Channel MOSFET transistor manufactured by Renesas Electronics America.

  • Category: Discrete Semiconductor Products, specifically FETs and MOSFETs
  • Mounting Type: Surface Mount
  • Package: 8-TSSOP
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 7A @ 25°C
  • Rds On (Max): 16mOhm @ 3.5A and 10V
  • Gate Charge (Qg): 38nC @ 10V
  • Characteristics: General-purpose
  • Status: Active
  • Packaging: Tape and reel
  • Standard Package Quantity: 3,000 pieces
  • HTSUS code: 8541.29.0095
  • REACH status: REACH Affected

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