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Same model may have multiple batches, images only for reference.
UPA1912TE(0)-T1-AT
Same model may have multiple batches, images only for reference.

UPA1912TE(0)-T1-AT

Part No UPA1912TE(0)-T1-AT
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 4.5A SC95 / P-Channel 12 V 4.5A (Ta) 200mW (Ta) Surface Mount SC-95
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 50mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 4 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 10 V
Power Dissipation (Max) 200mW (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package SC-95
Package / Case SC-95
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 902065-UPA1912TE(0)-T1-AT
Ultra Librarian 3D Model Ultra Librarian UPA1912TE(0)-T1-AT CAD Model

Description

The UPA1912TE(0)-T1-AT is a single P-channel MOSFET designed for discrete semiconductor applications.

  • Channel Type: P-channel
  • Packaging: Tape & reel
  • Standard Package: 3,000 pieces
  • Drain to Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id) @ 25°C: 4.5A
  • Rds On: 50mOhm @ 2.5A and 4.5V
  • Mounting: Surface mount
  • Package: SC-95
  • Power Dissipation: 200mW @ Ta

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