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UPA2210T1M-T1-AT

Name: UPA2210T1M-T1-AT
Brand: Renesas Electronics America
SKU: 389317
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	UPA2210T1M-T1-AT
Manufacturer	Renesas Electronics America
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 20V 7.2A 8VSOF
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Renesas Electronics America
Package	Bulk
Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	7.2A (Ta)
Rds On (Max) @ Id, Vgs	29mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 10 V
Power Dissipation (Max)	1.1W (Ta)
Temperature Range - Operating	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-VSOF
Package / Case	8-SMD, Flat Lead
Standard Package	3,000 pcs
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	389317-UPA2210T1M-T1-AT
Ultra Librarian 3D Model	Ultra Librarian UPA2210T1M-T1-AT CAD Model

Alternative Products

Description

The 389317-UPA2210T1M-T1-AT is a P-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for use in discrete semiconductor products. It has a drain to source voltage (Vdss) of 20V and a continuous drain current (Id) of 7.2A @ 25°C.

Vdss: 20V
Id: 7.2A @ 25°C
Rds On (Max): 29mOhm
Package: surface mount
Configuration: 8-SMD, flat lead
Gate Charge (Qg): 16.3nC
Input Capacitance (Ciss): 1350pF
Operating Temperature: up to 150°C
Status: obsolete

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