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UPA2701TP-E1-AZ

Part No UPA2701TP-E1-AZ
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description UPA2701TP - Switching N-Channel
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 35A(Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 10 V
Power Dissipation (Max) 3W (Ta), 28W (Tc)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Package / Case 8-SOIC (0.173", 4.40mm Width) Exposed Pad
Standard Package 1 pcs
Win Source Part Number 389382-UPA2701TP-E1-AZ
Ultra Librarian 3D Model Ultra Librarian UPA2701TP-E1-AZ CAD Model

Description

The UPA2701TP-E1-AZ is a N-Channel MOSFET transistor from Renesas Electronics America.

  • Designed for: Use in discrete semiconductor products, specifically in transistors and MOSFETs.
  • Drain to Source Voltage (Vdss): 30V.
  • Continuous Drain Current (Id): 16A @ 25°C.
  • Maximum On-Resistance (Rds On): 7.5mOhm @ 7A and 10V.
  • Mounting Type: Surface mountable.
  • Package: 8-SOIC package with an exposed pad.
  • Gate Charge (Qg): 12nC @ 5V.
  • Input Capacitance (Ciss): 1200pF @ 10V.
  • Maximum Temperature: 150°C.
  • Status: Obsolete.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8043 $60.3225
175+ $0.6601 $115.5175
275+ $0.6394 $175.8350
375+ $0.6188 $232.0500
485+ $0.5982 $290.1270
650+ $0.5363 $348.5950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,114 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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