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UPA2726UT1A-E1-AY

Part No UPA2726UT1A-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A 8DFN
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds 1720 pF @ 15 V
Mounting Type Surface Mount
Supplier Device Package 8-DFN3333 (3.3x3.3)
Package / Case 8-VDFN Exposed Pad
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 389444-UPA2726UT1A-E1-AY
Ultra Librarian 3D Model Ultra Librarian UPA2726UT1A-E1-AY CAD Model

Description

The 389444-UPA2726UT1A-E1-AY is an N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from Renesas Electronics America.

  • Category: discrete semiconductor products, specifically for FET (Field-Effect Transistor) applications
  • Package: bulk
  • Standard package quantity: 3,000 pieces
  • Drain to source voltage (Vdss): 30V
  • Maximum on-resistance (Rds On): 7mOhm @ drain current (Id) of 10A and a gate-source voltage (Vgs) of 10V
  • Threshold voltage (Vgs(th)): 2.5V @ drain current (Id) of 1mA
  • Mounting Type: surface mountable
  • Package: 8-VDFN exposed pad package
  • ECCN: EAR99
  • HTSUS code: 8541.29.0095
  • Status: obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8166 $61.2450
175+ $0.6699 $117.2325
270+ $0.6491 $175.2570
370+ $0.6283 $232.4710
480+ $0.6075 $291.6000
640+ $0.5440 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,313 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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