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Same model may have multiple batches, images only for reference.
UPA2731UT1A-E1-AY
Same model may have multiple batches, images only for reference.

UPA2731UT1A-E1-AY

Part No UPA2731UT1A-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet P-ch 30V 44A 8-PIN Hvson T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 44 A
Drain to Source Voltage (Vdss) 30 V
Fall Time 510 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 3.62 nF
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.5 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 8
Packaging Tape & Reel
Radiation Hardening No
Rds On Max 3.3 mΩ
Rise Time 16 ns
RoHS Compliant
Turn-Off Delay Time 760 ns
Turn-On Delay Time 15 ns
Win Source Part Number 1102446-UPA2731UT1A-E1-AY
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian UPA2731UT1A-E1-AY CAD Model

Description

The Renesas Electronics America UPA2731UT1A-E1-AY is a MOSFET transistor designed for RF applications.

  • Drain to Source Voltage: 30V
  • Input Capacitance: 3.62nF
  • Rise Time: 16ns
  • Fall Time: 510ns
  • Continuous Drain Current: 44A
  • Rds On Max: 3.3 mΩ
  • Mount: Surface mount
  • RoHS Compliant: Yes
  • Supply and Demand Status: Shortage

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