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UPD120N25T1B-E1

Part No UPD120N25T1B-E1
Manufacturer Renesas Electronics America
Catalog PMIC - Voltage Regulators - Linear
Description THREE-TERMINAL LOW-DROPOUT POSITIVE-VOLTAGE REGULATOR (OUTPUT CURRENT: 0.3 A)
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Manufacturer Renesas Electronics America
Win Source Part Number 391270-UPD120N25T1B-E1
Popularity Medium
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Ultra Librarian 3D Model Ultra Librarian UPD120N25T1B-E1 CAD Model

Description

The UPD120N25T1B-E1 is a power MOSFET manufactured by Renesas Electronics America. It's designed for power switching applications where efficiency and reliability are crucial. This MOSFET is characterized by its low on-resistance, which minimizes power loss and enhances overall system performance. The device's rapid switching capabilities make it suitable for high-frequency applications.

Applications:

  • DC-DC Converters: Used in voltage conversion for a wide range of electronic devices.
  • Power Management Circuits: Improves power efficiency in portable devices and other energy-sensitive applications.
  • Motor Control: Enables efficient control of electric motors in various applications.
  • Synchronous Rectification: Enhances efficiency in switching power supplies by reducing diode conduction losses.

Features:

  • Low On-Resistance (RDS(on)): Reduces conduction losses, leading to higher efficiency.
  • High-Speed Switching: Allows for higher frequency operation, potentially reducing the size of passive components.
  • Low Gate Charge (Qg): Minimizes switching losses and improves overall efficiency.
  • Avalanche Rated: Offers robustness against voltage transients and spikes.
  • RoHS Compliant: Complies with RoHS standards, ensuring environmental friendliness.

Benefits:

  • Increased Power Efficiency: Lowers energy consumption and reduces heat generation.
  • Compact Design: Enables smaller and lighter electronic devices.
  • Improved System Reliability: Provides stable and dependable performance.
  • Cost Reduction: Optimizes system efficiency and lowers overall component costs.

Technical Specifications:

The UPD120N25T1B-E1 typically features a drain-source voltage (VDS) of 250V, a continuous drain current (ID) around 12A, and a low RDS(on) value. The gate threshold voltage (VGS(th)) is typically between 2V and 4V. The device is commonly available in a surface-mount package, like the TO-252, facilitating easy integration into circuit boards.

This MOSFET is well-suited for power switching applications demanding efficiency, size, and reliability. Its characteristics make it a valuable component in synchronous rectification, DC-DC conversion, and motor control circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.8034 $60.8544
38+ $3.1208 $118.5904
58+ $3.0238 $175.3804
79+ $2.9256 $231.1224
103+ $2.8286 $291.3458
137+ $2.5364 $347.4868
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Availability: 11,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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