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Same model may have multiple batches, images only for reference.
2SA854STPR Real Image
Same model may have multiple batches, images only for reference.

2SA854STPR

Part No 2SA854STPR
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 32V 0.5A SPT / Bipolar (BJT) Transistor PNP 32 V 500 mA 200MHz 300 mW Through Hole SPT
Datasheet
2SA854STPR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Rohm Semiconductor
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 32 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 100mA, 3V
Power - Max 300 mW
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case SC-72 Formed Leads
Supplier Device Package SPT
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 5,000
Win Source Part Number 1036685-2SA854STPR
Ultra Librarian 3D Model Ultra Librarian 2SA854STPR CAD Model

Description

The 1036685-2SA854STPR is a PNP transistor manufactured by Rohm Semiconductor.

  • Category: Discrete semiconductor products
  • Packaging: Tape and box
  • Maximum Power: 300mW
  • Maximum Voltage (Collector-Emitter Breakdown): 32V
  • Maximum Collector Current: 500mA
  • Transistor Type: PNP
  • Vce Saturation: 600mV @ Ib, Ic
  • Current-Collector Cutoff: 1μA (ICBO)
  • DC Current Gain (hFE): 180 @ Ic, Vce
  • Frequency-Transition: 200MHz
  • Mounting Type: Through-hole
  • Package/Case: SC-72 Formed Leads
  • Supplier Device Package: SPT
  • Temperature Range: 150°C (TJ)
  • Status: Obsolete

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