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2SB1132T100P

Part No 2SB1132T100P
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 32V 1A SOT-89
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 32V
Max Vce (sat) 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 500nA (ICBO)
Typical Gain (hFE) (Min) 82 @ 100mA, 3V
Maximum Power Dissipation 2W
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package MPT3
Win Source Part Number 053625-2SB1132T100P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SB1132T100P CAD Model

Description

2SB1132T100P Transistor

The 2SB1132T100P is a high-performance PNP bipolar junction transistor (BJT) designed for diverse applications requiring precise control and high efficiency. This component is widely used in amplification and switching operations due to its robust features and reliable performance.

  • Features and Benefits:
    • High DC current gain for better signal amplification
    • Low collector-emitter saturation voltage, optimizing energy efficiency
    • Reliable thermal performance for stable operation in varied environments
  • Applications:
    • Audio amplifiers
    • Switching circuits
    • Power management systems
    • Signal processing

This transistor is ideal for projects and applications that demand consistent performance, making it a preferred choice for professionals and hobbyists alike.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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