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Same model may have multiple batches, images only for reference.
R6015ANX Real Image
Same model may have multiple batches, images only for reference.

R6015ANX

Part No R6015ANX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO-220FM
Datasheet
R6015ANX Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 210531-R6015ANX
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian R6015ANX CAD Model

Description

The R6015ANX is an N-Channel MOSFET from Rohm Semiconductor that is suitable for use in various electronic applications.

  • Manufacturer: Rohm Semiconductor
  • Maximum power dissipation: 50W (Tc)
  • Continuous drain current: 15A (Ta) @ 25°C
  • Temperature range: 150°C (TJ)
  • Gate-source threshold voltage: 4.5V @ 1mA
  • Package: TO-220FM
  • Drain-source breakdown voltage: 600V
  • Maximum Rds On @ Id,Vgs: 300 mOhm @ 7.5A, 10V
  • Status: Not for new designs
  • Alternative parts: SPA11N65C3, STP11NM60FDFP, and STF18N60M2(045Y)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0926 $60.0930
130+ $0.8974 $116.6620
200+ $0.8686 $173.7200
275+ $0.8408 $231.2200
360+ $0.8131 $292.7160
480+ $0.7288 $349.8240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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