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2SC5248-E/2SA1964-E

Part No 2SC5248-E/2SA1964-E
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Rohm Semiconductor
Win Source Part Number 156993-2SC5248-E/2SA1964-E
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC5248-E/2SA1964-E CAD Model

Description

The 2SC5248-E/2SA1964-E transistor pair is a versatile electronic component used in a variety of applications. Known for its reliability and durability, this bipolar junction transistor (BJT) pair serves as a crucial component in audio amplification and power management systems. Leveraging its complementary nature, the 2SC5248-E/2SA1964-E offers streamlined performance in amplifier circuits, contributing to improved sound quality and efficient power delivery.

Features and Benefits

  • High Power Handling Capability: The 2SC5248-E/2SA1964-E is designed to manage high power levels, making it suitable for demanding audio applications and power amplifier stages.
  • Complementary Configuration: Paired as complementary NPN and PNP transistors, they facilitate balanced and symmetrical circuit designs, enhancing efficiency and minimizing distortion.
  • Thermal Stability: These transistors exhibit excellent thermal stability, ensuring consistent performance even under fluctuating environmental conditions.

Applications

  • Audio Amplifiers
  • Power Supply Circuits
  • Switching Regulators
  • Inverter Circuits
  • Driver Stages for High-Power LEDs

Additional Details

Engineered with precision, the 2SC5248-E/2SA1964-E transistors are an excellent choice for designers and engineers focusing on audio and high-power applications. The complementary nature of this pair provides a simplified approach to creating push-pull amplifier circuits, which are essential for high-quality audio reproduction.

The 2SC5248-E (NPN) and 2SA1964-E (PNP) combination allows for efficient energy transfer and minimal losses, crucial in devices where power efficiency is paramount. Their robust construction minimizes the risk of thermal runaway, a common issue in high-power components, thus extending the lifespan of electronic devices where they are deployed.

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