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Same model may have multiple batches, images only for reference.
QSZ4TR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

QSZ4TR

Part No QSZ4TR
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 30V 2A 5TSMT
Datasheet
QSZ4TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP (Emitter Coupled)
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 370mV @ 75mA, 1.5A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 270 @ 200mA, 2V
Maximum Power Dissipation 1.25W
Frequency - Transition 280MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT5
Win Source Part Number 027071-QSZ4TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QSZ4TR CAD Model

Description

The QSZ4TR from Rohm Semiconductor is an NPN/PNP transistor with a maximum collector-emitter breakdown voltage of 30V and maximum collector current of 2A.

  • Collector-Emitter Breakdown Voltage: 30V
  • Maximum Collector Current: 2A
  • Maximum Power Dissipation: 1.25W
  • Frequency Transition: 280MHz
  • Typical Gain: 270 @ 200mA and 2V
  • Packaging: Reel
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2848 $58.3840
495+ $0.2338 $115.7310
765+ $0.2265 $173.2725
1,055+ $0.2191 $231.1505
1,365+ $0.2118 $289.1070
1,825+ $0.1899 $346.5675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,790 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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