The 2SC5585 is a silicon NPN epitaxial planar transistor manufactured by Rohm Semiconductor. This transistor is designed for high-frequency power amplification applications, typically in VHF and UHF bands. It is well-suited for use in mobile communication devices and other RF power amplifier circuits.

Applications:

• VHF/UHF Power Amplifiers: Used in high-frequency power amplifier stages.
• Mobile Communication Devices: Employed in cellular phones, pagers, and other wireless communication equipment.
• RF Transmitters: Suitable for use in RF transmitter circuits.
• High-Frequency Oscillators: Can be used in high-frequency oscillator applications.
• Driver Stages: Used to drive larger power transistors.

Features:

• NPN Silicon Epitaxial Planar Transistor: Utilizes proven transistor technology.
• High Power Gain: Provides significant signal amplification.
• High Collector Current (IC): Capable of handling relatively high currents.
• Low Output Capacitance: Minimizes signal loss at high frequencies.
• RoHS Compliant: Meets environmental regulations.

Benefits:

• Excellent High-Frequency Performance: Provides reliable amplification at VHF and UHF frequencies.
• High Power Output: Delivers substantial power for RF transmission.
• Stable Operation: Ensures consistent performance over a range of operating conditions.
• Compact Size: Typically available in a small surface-mount package.
• Environmentally Friendly: Compliant with RoHS regulations.

Typical specifications for the 2SC5585 include a collector-emitter voltage (VCEO) of 12V, a collector current (IC) of 800mA, and a transition frequency (fT) of 6.5 GHz. The power dissipation (PC) is typically around 1.5W. It is commonly packaged in a small SOT-343 or similar surface-mount package.