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2SC5729T106R

Part No 2SC5729T106R
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 0.5A SC70
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 300mV @ 10mA, 100mA
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 180 @ 50mA, 2V
Maximum Power Dissipation 200mW
Frequency - Transition 300MHz
Mounting SMD (SMT)
Case / Package UMT3
Win Source Part Number 053658-2SC5729T106R
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC5729T106R CAD Model

Description

Description

The 2SC5729T106R is a specialized bipolar junction transistor, often deployed in applications requiring high-speed switching and precision. A staple in the electronics industry, this component is lauded for its sophisticated design and superior operational capabilities, fulfilling the needs of contemporary electronic infrastructures.

Features and Benefits

  • Precision Switching: Engineered for exact switching operations, enhancing digital signal accuracy.
  • Wide Frequency Handling: Supports a broad spectrum of frequencies, making it versatile for intricate applications.
  • Thermal Efficiency: Built to maintain stable thermal performance across various loads.
  • Compact Design: Space-saving physical footprint allows for efficient circuit integration.

Applications

  • Digital Signal Processing: Efficiently processes digital signals in high-tech processing units.
  • Advanced Communication Systems: Used in the communication sectors for accurate and efficient signaling operations.
  • Precision Control Systems: Functions effectively in precision control applications in automotive and aerospace industries.

Additional Details

The 2SC5729T106R is crafted to offer stellar performance in varied applications, ensuring sustained operational integrity over lengthy periods. Its innovative design is responsive to the multifaceted demands of emerging technologies, delivering cutting-edge transistor solutions conducive to next-generation electronics development. It is frequently embedded in systems where accuracy and reliability are indispensable, reinforcing its status as a preferred component in high-end electronic designs.

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