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BSM120D12P2C005

Name: BSM120D12P2C005
Brand: Rohm Semiconductor
SKU: 572077
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	BSM120D12P2C005
Manufacturer	Rohm Semiconductor
Catalog	FETs - Arrays
Description	MOSFET 2N-CH 1200V 120A MODULE
Datasheet	BSM120D12P2C005 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr	Rohm Semiconductor
Package	Bulk
Product Status	Active
Technology	Silicon Carbide (SiC)
Configuration	2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs(th) (Max) @ Id	2.7V @ 22mA
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 10V
Power - Max	780W
Temperature Range - Operating	-40°C ~ 150°C (TJ)
Package / Case	Module
Supplier Device Package	Module
Base Product Number	BSM120
Standard Package	12 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	572077-BSM120D12P2C005
Ultra Librarian 3D Model	Ultra Librarian BSM120D12P2C005 CAD Model

Alternative Products

Description

The BSM120D12P2C005 is an active module from Rohm Semiconductor.

Category: discrete semiconductor products, specifically transistors, FETs, and MOSFET arrays
Technology: silicon carbide (SiC)
Vdss: 1200V (1.2kV)
Id: 120A (Tc) @ 25°C
Configuration: 2 N-Channel (half bridge)
Package: bulk package with a standard package size of 12 pieces
ECCN: EAR99
REACH: unaffected
Maximum Power Rating: 780W
Operating Temperature: -40°C to 150°C (TJ)
Suitable for: various applications that require high voltage and high current switching
Status: active product and can be considered for new designs

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Quantity	Unit Price	Ext. Price
1+	$375.3750	$375.3750

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