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DTA113ZCAT116

Name: DTA113ZCAT116
Brand: Rohm Semiconductor
SKU: 1056425
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	DTA113ZCAT116
Manufacturer	Rohm Semiconductor
Catalog	RF Transistors (BJT)
Description	PNP, SOT-23, R1R2 LEAK ABSORPTIO / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 50 V 100 mA 250 MHz 200 mW Surface Mount SST3
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr	Rohm Semiconductor
Package	Tape & Reel
Transistor Type	PNP - Pre-Biased + Diode
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	1 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250 MHz
Power - Max	200 mW
Mounting	SMD (SMT)
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SST3
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0075
Other Names	846-DTA113ZCAT116DKR,846-DTA113ZCAT116CT,846-DTA113ZCAT116TR
Standard Package	3,000
Win Source Part Number	1056425-DTA113ZCAT116
Ultra Librarian 3D Model	Ultra Librarian DTA113ZCAT116 CAD Model

Alternative Products

Description

The DTA113ZCAT116 is a PNP pre-biased transistor with a diode.

Maximum Power: 200 mW.
Voltage Breakdown: 50V.
Maximum Collector Current: 100 mA.
Frequency Transition: 250 MHz.
Vce Saturation: 300mV @ 500µA, 10mA.
Minimum DC Current Gain (hFE): 33 @ 5mA, 5V.
Package: TO-236-3, SC-59, SOT-23-3.
Supplier Device Package: SST3.
Current Cutoff: 500nA.
Resistor - Base (R1): 1 kOhms.
Resistor - Emitter Base (R2): 10 kOhms.
Packaging: Tape and reel.
Standard Package: 3,000.

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