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DTB523YMT2L

Part No DTB523YMT2L
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PREBIAS PNP 150MW VMT3  /  Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 12 V 500 mA 260 MHz 150 mW Surface Mount VMT3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel (TR)
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 12 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 260 MHz
Power - Max 150 mW
Mounting SMD (SMT)
Package / Case SOT-723
Supplier Device Package VMT3
Base Product Number DTB523
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 8,000
Win Source Part Number 1123495-DTB523YMT2L
Ultra Librarian 3D Model Ultra Librarian DTB523YMT2L CAD Model

Description

The DTB523YMT2L is a pre-biased transistor designed for use in electronic devices.

  • Manufacturer: Rohm Semiconductor
  • Mounting: Surface Mount
  • Package: Tape and reel
  • Standard Packages: 8,000
  • Power Max: 150mW
  • Voltage Collector Emitter Breakdown (Max): 12V
  • Current Collector (Ic) (Max): 500mA
  • Transistor Type: PNP - Pre-Biased
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
  • Frequency - Transition: 260 MHz
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)

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