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Same model may have multiple batches, images only for reference.
IPI60R299CP Real Image
Same model may have multiple batches, images only for reference.

IPI60R299CP

Part No IPI60R299CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V
Power Dissipation (Max) 96W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 231 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603573-IPI60R299CP
Ultra Librarian 3D Model Ultra Librarian IPI60R299CP CAD Model

Description

The 603573-IPI60R299CP is an N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™ series of discrete semiconductor products
  • Vdss: 600V
  • Id: 11A @ 25°C
  • Rds On (Max): 299mOhm @ 6.6A and 10V
  • Qg: 29nC @ 10V
  • Ciss: 1100pF @ 100V
  • Operating Temperature: -55°C to 150°C
  • Mounting: through-hole
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Manufacturer: Infineon Technologies

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