PSMN5R6-100BS MOSFET - NXP Semiconductors

The PSMN5R6-100BS is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) produced by NXP Semiconductors. This device is specifically designed to provide efficient power management in a wide range of applications. It is part of NXP's portfolio of low on-resistance, high-density power MOSFETs that are known for their reliability and energy efficiency.

Key Features

• Low On-Resistance: The PSMN5R6-100BS boasts a very low on-state resistance (R<sub>DS(on)) of just 5.6 mΩ at V<sub>GS = 10 V, which minimizes conduction losses and enhances overall efficiency.
• High Continuous Current: It can handle a continuous drain current (I<sub>D) of up to 100 A, making it suitable for high current applications.
• High Power Dissipation: With a power dissipation of 429 W, this MOSFET can withstand significant energy without overheating, contributing to its robust performance.
• 100 V Drain-Source Voltage: The device is rated for a maximum drain-source voltage (V<sub>DS) of 100 V, which allows it to be used in higher voltage circuits and applications.
• Fast Switching Speed: The fast switching capability ensures minimal losses during the transition from on to off states and vice versa, which is critical for high-speed power switching applications.
• Enhanced Durability: The PSMN5R6-100BS is encapsulated in an LFPAK56 (Power-SO8) package, which offers a rugged and compact design, with excellent thermal conduction properties.

Applications

The PSMN5R6-100BS is ideal for a variety of applications, including:

• DC/DC converters
• Motor drives
• Power management systems
• Computing and server power supplies
• Automotive systems
• Solar inverters
• Uninterruptible power supplies (UPS)

With its combination of low on-resistance, high current capability, and fast switching performance, the PSMN5R6-100BS MOSFET from NXP Semiconductors is an excellent choice for designers looking to optimize power efficiency and reliability in their electronic designs.