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Same model may have multiple batches, images only for reference.
DTC114EEFRATL Real Image
Same model may have multiple batches, images only for reference.

DTC114EEFRATL

Part No DTC114EEFRATL
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW EMT3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 5V
Max Vce (sat) 300mV @ 500nA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package EMT3
Win Source Part Number 1035578-DTC114EEFRATL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DTC114EEFRATL CAD Model

Description

The DTC114EEFRATL transistor by Rohm Semiconductor is an NPN pre-biased transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 50mA.

  • Base Resistor: 10k ohms
  • Emitter-Base Resistor: 10k ohms
  • Frequency Transition: 250MHz
  • Typical Gain: 30 @ 5mA and 5V
  • Collector Cut-Off Current: 500nA
  • Maximum Power Dissipation: 150mW
  • Mounting: SMD (SMT)
  • Case: EMT3
  • Market Presence: popular
  • Supply and Demand Status: balanced

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