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Same model may have multiple batches, images only for reference.
DTC123ECAT116 Real Image
Same model may have multiple batches, images only for reference.

DTC123ECAT116

Part No DTC123ECAT116
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description NPN 100MA 50V DIGITAL TRANSISTOR / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SST3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SST3
Base Product Number DTC123
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names DTC123ECAMGT116,DTC123ECAT116DKR,DTC123ECAT116TR,DTC123ECAT116CT
Standard Package 3,000
Win Source Part Number 1056444-DTC123ECAT116
Ultra Librarian 3D Model Ultra Librarian DTC123ECAT116 CAD Model

Description

The DTC123ECAT116 by Rohm Semiconductor is a pre-biased NPN transistor with a maximum power of 200 mW and a voltage rating of 50V.

  • Frequency Transition: 250 MHz
  • Vce Saturation: 300mV @ 500µA, 10mA
  • Packaging: Tape & reel
  • Standard Package: 3,000
  • Package: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SST3
  • ECCN: EAR99
  • REACH: REACH unaffected.

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