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DTD133HKT146

Part No DTD133HKT146
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 200MW SMT3 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 200 mW Surface Mount SMT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel (TR)
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 3.3 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200 MHz
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SMT3
Base Product Number DTD133
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 3,000
Win Source Part Number 981886-DTD133HKT146
Ultra Librarian 3D Model Ultra Librarian DTD133HKT146 CAD Model

Description

The DTD133HKT146 is an NPN - Pre-Biased transistor manufactured by Rohm Semiconductor. It is a surface mount device with a TO-236-3, SC-59, SOT-23-3 package and a mounting of SMD (SMT). It has a power - max of 200mW, voltage - collector emitter breakdown (Max) of 50V, and current - collector (Ic) (Max) of 500mA. It has a Vce saturation (Max) @ Ib, Ic of 300mV @ 2.5mA, 50mA and DC current gain (hFE) (Min) @ Ic, Vce of 56 @ 50mA, 5V. The frequency - transition is 200MHz. This product is in the Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased category.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5735 $51.6150
215+ $0.4706 $101.1790
330+ $0.4559 $150.4470
455+ $0.4412 $200.7460
590+ $0.4265 $251.6350
785+ $0.3824 $300.1840
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Availability: 1,696 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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