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Same model may have multiple batches, images only for reference.
EM6K31GT2R Real Image
Same model may have multiple batches, images only for reference.

EM6K31GT2R

Part No EM6K31GT2R
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 0.25A EMT6
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 2.5V Drive
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 250mA
Maximum Rds On at Id,Vgs 2.4 Ohm @ 250mA, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Input Capacitance 15pF @ 25V
Maximum Power Dissipation 120mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package EMT6
Win Source Part Number 1036295-EM6K31GT2R
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian EM6K31GT2R CAD Model

Description

The 1036295-EM6K31GT2R from Rohm Semiconductor is a dual N-channel logic level gate FET with a maximum power dissipation of 120mW.

  • Mounting: SMD (SMT)
  • Breakdown Voltage: 60V
  • Continuous Drain Current: 250mA @ 25°C
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Market Status: Popular
  • ECCN: EAR99 compliant

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