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Same model may have multiple batches, images only for reference.
IMB2AT110 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

IMB2AT110

Part No IMB2AT110
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS DUAL PNP SMT6
Datasheet
IMB2AT110 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 68 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMT6
Win Source Part Number 115778-IMB2AT110
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IMB2AT110 CAD Model

Description

The Rohm Semiconductor IMB2AT110 is a high-quality electronic component that is designed to be used in various electronic devices.

  • Supply and Demand Status: sufficient
  • Type: dual PNP transistor
  • Frequency Transition: 250MHz
  • Resistor Base: 47k ohms
  • Resistor Emitter Base: 47k ohms
  • Application: discrete semiconductor products
  • Maximum Power Dissipation: 300mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,670+ $0.0347 $57.9490
4,170+ $0.0277 $115.5090
6,250+ $0.0277 $173.1250
8,700+ $0.0266 $231.4200
11,365+ $0.0254 $288.6710
15,000+ $0.0231 $346.5000
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MOQ: 1670 pcs
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