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Same model may have multiple batches, images only for reference.
IMD16AT108 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

IMD16AT108

Part No IMD16AT108
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.3W SMT6 / Trans Digital BJT NPN/PNP 50V 100mA/500mA 300mW 6-Pin SMT T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 100k, 2.2k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V / 82 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA / 300mV @ 100μA, 1mA
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMT6
Win Source Part Number 109583-IMD16AT108
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IMD16A
Introduction Date November 22, 1998
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian IMD16AT108 CAD Model

Description

The Rohm Semiconductor IMD16AT108 is a dual NPN and PNP pre-biased transistor that is ideal for use in discrete semiconductor products.

  • Maximum Collector Current: 100mA and 500mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 300mW
  • Frequency Transition: 250MHz
  • Resistor-Base: 100k and 2.2k ohms
  • Resistor-Emitter Base: 22k ohms
  • Typical Gain (hFE): 100 @ 1mA and 5V, and 82 @ 50mA and 5V
  • Packaging: SMD (SMT)
  • Case/Package: SMT6
  • Alternative Parts: IMD16A
  • Supply and Demand Status: Balanced
  • Halogen-Free: Compliant

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1,115+ $0.0898 $100.1270
1,725+ $0.0870 $150.0750
2,380+ $0.0842 $200.3960
3,075+ $0.0814 $250.3050
4,110+ $0.0730 $300.0300
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