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Same model may have multiple batches, images only for reference.
IMH2AT110 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

IMH2AT110

Part No IMH2AT110
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS DUAL NPN SMT6
Datasheet
IMH2AT110 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 68 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMT6
Win Source Part Number 102038-IMH2AT110
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IMH2AT110 CAD Model

Description

The Rohm Semiconductor 102038-IMH2AT110 is a dual NPN pre-biased transistor with a frequency transition of 250MHz.

  • Frequency Transition: 250MHz
  • Resistor-Base (R1): 47k Ohms
  • Resistor-Emitter Base (R2): 47k Ohms
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Temperature Range: -55°C to 125°C
  • Maximum Power Dissipation: 300mW
  • Packaging: SMT6

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