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QS5U26TR

Name: QS5U26TR
Brand: Rohm Semiconductor
SKU: 286290
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	QS5U26TR
Manufacturer	Rohm Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 20V 1.5A TSMT5
Datasheet	QS5U26TR Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Rohm Semiconductor
Packaging	Reel - TR
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Gate-Source Threshold Voltage	2V @ 1mA
Max Gate Charge	4.2nC @ 4.5V
Max Input Capacitance	325pF @ 10V
Maximum Gate-Source Voltage	±12V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.25W (Ta)
Maximum Rds On at Id,Vgs	200 mOhm @ 1.5A, 4.5V
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Case / Package	TSMT5
Dimension	SOT-23-5 Thin, TSOT-23-5
Win Source Part Number	113884-QS5U26TR
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian QS5U26TR CAD Model

Alternative Products

Description

The QS5U26TR is a P-Channel MOSFET with a Schottky diode feature (isolated) manufactured by Rohm Semiconductor.

Power Dissipation: 1.25W @ Ta
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current: 1.5A (Ta) @ 25°C
Gate-Source Threshold Voltage: 2V @ 1mA
Maximum Input Capacitance: 325pF @ 10V
Maximum Gate-Source Voltage: ±12V
Case/Package: TSMT5
Dimension: SOT-23-5 Thin, TSOT-23-5
Supply and Demand Status: balanced

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QS5U26TR

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