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QS6U22TR

Part No QS6U22TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.5A TSMT6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 3nC @ 4.5V
Max Input Capacitance 270pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 215 mOhm @ 1.5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT6 (SC-95)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1091089-QS6U22TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QS6U22TR CAD Model

Description

The Rohm Semiconductor QS6U22TR is a P-channel MOSFET transistor with a Schottky diode (isolated) feature.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.5A (Ta) @ 25°C
  • Maximum Rds on @ Id, Vgs: 215 mOhm @ 1.5A, 4.5V
  • Drive Voltage: 2.5V, 4.5V
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 3nC @ 4.5V
  • Maximum Input Capacitance: 270pF @ 10V
  • Mounting: SMD (SMT)
  • Operating Temperature: 150°C (TJ)
  • Case/Package: TSMT6 (SC-95)

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Pricing & Ordering

Quantity Unit Price Ext. Price
395+ $0.1478 $58.3810
955+ $0.1213 $115.8415
1,475+ $0.1178 $173.7550
2,045+ $0.1132 $231.4940
2,635+ $0.1097 $289.0595
3,530+ $0.0982 $346.6460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 103,052 pieces
MOQ: 395 pcs
Order Increment : 1 pcs
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