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Same model may have multiple batches, images only for reference.
QS8M13TCR Real Image
Same model may have multiple batches, images only for reference.

QS8M13TCR

Part No QS8M13TCR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 6A/5A TSMT8
Datasheet
QS8M13TCR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A, 5A
Maximum Rds On at Id,Vgs 28 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 5.5nC @ 5V
Max Input Capacitance 390pF @ 10V
Maximum Power Dissipation 1.5W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT8
Win Source Part Number 027061-QS8M13TCR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian QS8M13TCR CAD Model

Description

The QS8M13TCR is a N and P-Channel FET from Rohm Semiconductor.

  • Maximum Power Dissipation: 1.5W
  • Drain-Source Breakdown Voltage: 30V
  • Mounting: SMD (SMT)
  • Case/Package: TSMT8
  • Maximum Rds On: 28 mOhm @ 6A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 390pF @ 10V
  • Maximum Gate Charge: 5.5nC @ 5V
  • Temperature Range: 150°C (TJ)
  • RoHS Compliant: yes
  • Applications: power management circuits, DC-DC converters, and battery protection circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5573 $58.5165
255+ $0.4573 $116.6115
395+ $0.4431 $175.0245
540+ $0.4287 $231.4980
700+ $0.4144 $290.0800
935+ $0.3716 $347.4460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,800 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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