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Same model may have multiple batches, images only for reference.
R5021ANX Real Image
Same model may have multiple batches, images only for reference.

R5021ANX

Part No R5021ANX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 21A TO220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 2300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 210 mOhm @ 10.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1091197-R5021ANX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R5021ANX CAD Model

Description

The Rohm Semiconductor R5021ANX is a high-performance N-channel MOSFET that is designed for use in a range of electronic applications.

  • Maximum Power Dissipation: 50W
  • Drain-Source Breakdown Voltage: 500V

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