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R6006JND3TL1

Part No R6006JND3TL1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6A TO252  /  N-Channel 600 V 6A (Tc) 86W (Tc) Surface Mount TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 936mOhm @ 3A, 15V
Vgs(th) (Max) @ Id 7V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 100 V
Power Dissipation (Max) 86W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number R6006
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-R6006JND3TL1TR,846-R6006JND3TL1DKR,846-R6006JND3TL1CT
Standard Package 2,500
Win Source Part Number 1014242-R6006JND3TL1
Ultra Librarian 3D Model Ultra Librarian R6006JND3TL1 CAD Model

Description

The R6006JND3TL1 is an N-Channel MOSFET transistor that is used in electronic circuits from Rohm Semiconductor.

  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id): 6A @ 25°C
  • Maximum On-Resistance: 936mOhm @ 3A and 15V
  • Power Dissipation: 86W @ Tc
  • Gate Charge (Qg): 15.5 nC @ 15 V
  • Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • REACH Status: Unaffected

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