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R6007JND3TL1

Part No R6007JND3TL1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A TO252  /  N-Channel 600 V 7A (Tc) 96W (Tc) Surface Mount TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 780mOhm @ 3.5A, 15V
Vgs(th) (Max) @ Id 7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 475 pF @ 100 V
Power Dissipation (Max) 96W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number R6007
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names R6007JND3TL1TR,R6007JND3TL1DKR,R6007JND3TL1CT
Standard Package 2,500
Win Source Part Number 1014243-R6007JND3TL1
Ultra Librarian 3D Model Ultra Librarian R6007JND3TL1 CAD Model

Description

The R6007JND3TL1 is an N-Channel MOSFET transistor designed for use in Discrete Semiconductor Products such as Transistors, FETs and MOSFETs.

  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id): 7A (Tc) @ 25°C
  • Maximum Rds On: 780mOhm @ 3.5A and 15V
  • Maximum Gate Charge (Qg): 17.5 nC @ 15 V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate Threshold Voltage (Vgs(th)): 7V @ 1mA
  • Ideal For: Use in a range of applications, including power supplies, motor control, and lighting.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $3.9728 $51.6464
31+ $3.2598 $101.0538
48+ $3.1579 $151.5792
66+ $3.0560 $201.6960
85+ $2.9542 $251.1070
114+ $2.6486 $301.9404
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,620 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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