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SIDR402DP-T1-GE3

Part No SIDR402DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 64.6A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 9100 pF @ 20 V
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
Base Product Number SIDR402
Other Names SIDR402DP-T1-GE3CT,SIDR402DP-T1-GE3DKR,SIDR402DP-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277627-SIDR402DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIDR402DP-T1-GE3 CAD Model

Description

The SIDR402DP-T1-GE3 is a TrenchFET® Gen IV series MOSFET manufactured by Vishay Siliconix.

  • Category: Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel
  • Standard Package: 3,000 units
  • Mounting Style: SMD (SMT)
  • Maximum Power Dissipation: 6.25W (Ta), 125W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
  • Mfr: Vishay Siliconix
  • Win Source Part Number: 1277627-SIDR402DP-T1-GE3

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3541 $52.2492
28+ $3.5726 $100.0328
44+ $3.4609 $152.2796
60+ $3.3493 $200.9580
78+ $3.2377 $252.5406
104+ $2.9027 $301.8808
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,630 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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